Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Tamotsu Yamashita; Hirofumi Matsuhata; Yoshihiko Miyasaka; Kenji Momose; Takayuki Sato; Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.778-780.374

Paper Titles

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Origin Analyses of Trapezoid-Shape Defects in...

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Abstract:

The trapezoid-shape defects are one of the most common surface defects on current 4H-SiC epitaxial film surface since they give rise negative impact for MOS-devices. We have investigated structures and origins of the defects. It is discovered that the possible origins of the trapezoid-shape defects are basal plane dislocations (BPDs), threading edge dislocations (TEDs), threading screw dislocations (TSDs),and the short dislocation loops introduced under scratches.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

374-377

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.374

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Online since:

February 2014

Authors:

Tamotsu Yamashita*, Hirofumi Matsuhata, Yoshihiko Miyasaka, Kenji Momose, Takayuki Sato, Makoto Kitabatake

Keywords:

Epitaxial Film Growth, Silicon Carbide (SiC), Surface Defect, Synchrotron X-Ray Topography, Trapezoid-Shape Defects

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