Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal

Yukari Ishikawa; Yong Zhao Yao; Koji Sato; Yoshihiro Sugawara; Yoshihiro Okamoto; Noritaka Hayashi

doi:10.4028/www.scientific.net/MSF.778-780.362

Paper Titles

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of Damage Induced by Electric...

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal

Abstract:

The damage induced at the cut surface of SiC crystal by slicing were investigated by Raman scattering method and transmission electron microscopy. Electric discharge machining (EDM) predominately forms cracks, silicon, carbon and 3C-SiC by 6H-SiC pyrolysis and wiresawing with loose abrasive (WSLA) induces triangular crystal disordered area, stacking faults and dislocation loop bundles by stressing at the cut surfaces of SiC crystal.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

362-365

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.362

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Online since:

February 2014

Authors:

Yukari Ishikawa*, Yong Zhao Yao, Koji Sato, Yoshihiro Sugawara, Yoshihiro Okamoto, Noritaka Hayashi

Keywords:

Dislocation Loop, Electric Discharge Machining (EDM), Pyrolysis, Silicon Carbide (SiC), Stacking Fault, Wiresawing

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References

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