Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching

Takahiro Sato; Yuya Suzuki; Hiroyuki Ito; Toshiyuki Isshiki; Munetoshi Fukui

doi:10.4028/www.scientific.net/MSF.778-780.358

Paper Titles

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Dislocation Analysis of 4H-SiC Using KOH Low...

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching

Abstract:

The conventional KOH etching method at elevated temperatures is an easy way to study SiC dislocations, but presents problems due to an increased etch rate. Here, we examine the application of low temperature KOH treatment for the analysis of dislocation cores and etch pits in SiC. A low energy scanning electron microscope (SEM) is effective to classify dislocation kinds. The scanning transmission electron microscope (STEM) observation of thick samples prepared by the in situ micro-sampling technique enables evaluation of detailed dislocation properties.