TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC

Toshimasa Kameda; Atsuo Tomita; Takaaki Matsui; Toshiyuki Isshiki

doi:10.4028/www.scientific.net/MSF.778-780.350

Paper Titles

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
p.332

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation
p.338

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

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TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC

Abstract:

The aim of this review is to present the observation of low-energy ion implanted SiC and annealing them by using TEM. By detail analyses of the TEM images and results of SRIM, ion implanted SiC was classification four structure depending on the ion concentration in a few ten nm shallow region. This results suggest that crystal structure in a few nm shallow region can be controled by concentration of the ion implant. And SiC was re-crystallized single poly-type after annealed at 1500°C. But, defects in end of amorphous region affect to recover the damaged structure .