Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation

Ryohei Tanuma; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.778-780.338

Paper Titles

Polarized Photoluminescence from Partial Dislocations in 4H-SiC
p.319

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers
p.324

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
p.328

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer
p.332

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation
p.338

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Three-Dimensional Imaging of Extended Defects in...

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation

Abstract:

This paper demonstrates optical second-harmonic generation (SHG) and two-photon excited photoluminescence (2P-PL) imaging of 3C-SiC inclusions forming triangular and carrot-type defects in 4H-SiC epilayers. Triangular defects exhibit clear SHG images because 3C-SiC is SHG active, but not 4H-SiC host crystal in c-axis incidence. A carrot defect provides SHG and 2P-PL images in different regions in a basal-plane fault area. The spectrums of the SHG and 2P-PL are also investigated, and their emission mechanisms discussed.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

338-341

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.338

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Online since:

February 2014

Authors:

Ryohei Tanuma*, Hidekazu Tsuchida

Keywords:

Photoluminescence (PL), Second-Harmonic Generation, Silicon Carbide (SiC), Two-Photon Excitation

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