Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Lin Dong; Guo Sheng Sun; Jun Yu; Guo Guo Yan; Wan Shun Zhao; Lei Wang; Xin He Zhang; Xi Guang Li; Zhan Guo Wang

doi:10.4028/www.scientific.net/MSF.778-780.354

Paper Titles

Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic Generation
p.338

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging
p.342

Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit Method
p.346

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Structure and Origin of Carrot Defects on 4H-SiC...

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Abstract:

A kind of broken carrot defects which are not parallel to the step flow direction are observed on 4H-SiC epilayer surfaces. We use the molten KOH and polishing methods to reveal the structure and source of the broken carrots. It is shown that the broken carrot defects still contain the prismatic stacking fault (SF) and basal plane SF and originate from threading screw dislocation on the substrate. The presence of other substrate threading dislocation can disturb the expansion of prismatic SF. This leads to the appearance of the broken carrot.