Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Yoshihiro Sugawara; Yong Zhao Yao; Yukari Ishikawa; Katsunori Danno; Hiroshi Suzuki; Takeshi Bessho; Satoshi Yamaguchi; Koichi Nishikawa; Yuichi Ikuhara

doi:10.4028/www.scientific.net/MSF.778-780.366

Paper Titles

TEM Observation of Defect Structure of Low-Energy Ion Implanted SiC
p.350

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
p.354

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
p.358

Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
p.362

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of Threading Edge Dislocation in...

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Abstract:

A threading dislocation (TD) in 4H-SiC, which was currently interpreted as a perfect threading edge dislocation (TED) by synchrotron monochromatic-beam X-ray topography (SMBXT) and molten KOH etching with Na₂O₂ additive, was performed comparative characterization using weak-beam dark-field (WBDF) and large-angle convergent-beam electron diffraction (LACBED) methods. The TD was suggested to be dissociated into a dislocation pair which can be observed in the WBDF image of g=-12-10. The TD, which was identified as b//[-12-10] by SMBXT observation, was unambiguously determined as b=1/3[-12-10] by LACBED analysis. In the case of perfect TED, it was found that the direction of Burgers vector derived from SMBXT observation corresponds to LACBED analysis.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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366-369

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.366

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Online since:

February 2014

Authors:

Yoshihiro Sugawara*, Yong Zhao Yao, Yukari Ishikawa, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho, Satoshi Yamaguchi, Koichi Nishikawa, Yuichi Ikuhara

Keywords:

Burgers Vector, Hexagonal SiC, Threading Edge Dislocation, Transmission Electron Microscopy (TEM), X-Ray Topography

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