Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers

Michiya Odawara; Koji Kamei; Yoshihiko Miyasaka; Tamotsu Yamashita; Seiichi Takahashi; Yoshiaki Kageshima; Kenji Momose; Hiroshi Osawa; Takayuki Sato

doi:10.4028/www.scientific.net/MSF.778-780.382

Paper Titles

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
p.366

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

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Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers

Abstract:

4H-SiC epitaxial wafers were prepared for the investigation of epitaxial stacking faults (SFs), for the purpose of classification and add to the epitaxial specification by PL-imaging analysis. Black colored SFs detected in PL colored images were focused, and investigated. Black SFs in the PL images were classified for two species, ones were correspond to the triangular defects, and the others were similar to the known SFs. Triangular defects were the killer defects for the I-V properties and the other black defects were not affected the I-V properties. Most of PL spectrums of triangular defects had the 538nm peak, and showed the 3C properties. Black defects undetectable as the surface defects (SDs) had 460, 480nm peak, differed from the reported typical 1-4SSFs spectrum. It seemed that these defects differed from the thickness of stacking layer and PL peak, whether the defects led to detectable/undetectable as the SDs. Thick stacking layers generated the triangular defects, and thin ones generated the PL-black defects undetectable as the surface analysis. Consequently, the black defects undetectable as the surface analysis (detected only for the PL-imaging analysis) has no use for add to the specification at the moment.