Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate

Shoji Ushio; Tatsuo Fujimoto; Hiroshi Tsuge; Masakazu Katsuno; Shinya Sato; Komomo Tani; Hosei Hirano; Takayuki Yano

doi:10.4028/www.scientific.net/MSF.778-780.390

Paper Titles

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
p.374

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

Nanoscale Characterization of SiC Interfaces and Devices
p.407

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Formation of Double Stacking Faults from Polishing...

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate

Abstract:

Epitaxial layers grown on mechanically lapped 4H-SiC (0001) substrates were analyzed by using scanning ion microscopy (SIM), photoluminescence (PL) mapping and transmission electron microscopy (TEM). Even in the use of substrates with standard nitrogen concentration of 1.3 × 10¹⁹ cm^-3, double Shockley-type stacking faults were observed to be formed in the epitaxial layer from the interface between the epitaxial layer and the substrate without any external stresses. Surface damaged layer seems to cause the formation of not only 2SSFs but also threading edge dislocation (TED) half-loops during epitaxial growth.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

390-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.390

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Online since:

February 2014

Authors:

Shoji Ushio*, Tatsuo Fujimoto, Hiroshi Tsuge, Masakazu Katsuno, Shinya Sato, Komomo Tani, Hosei Hirano, Takayuki Yano

Keywords:

Epitaxy, Stacking Fault, Surface

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References

[1] T.A. Kuhr, J. Liu, H.J. Chung, M. Skowronski, F. Szmulowicz, Journal of Applied Physics 92 (2002) 5863.

Google Scholar

[2] K. Irmscher, M. Albrecht, M. Rossberg, H. -J. Rost, D. Siche, G. Wagner, Physica B 376-377 (2006) 338.

DOI: 10.1016/j.physb.2005.12.087

Google Scholar

[3] N. Ohtani, M. Katsuno, M. Nakabayashi, T. Fujimoto, H. Tsuge, H. Yashiro, T. Aigo, H. Hirano, T. Hoshino, K. Tatsumi, Journal of Crystal Growth 311 (2009) 1475.

DOI: 10.1016/j.jcrysgro.2009.01.119

Google Scholar

[4] M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro, H. Tsuge, T. Aigo, T. Hoshino, K. Tatsumi, Material Science Forum 600-603 (2009) 341.

DOI: 10.4028/www.scientific.net/msf.600-603.341

Google Scholar

[5] G. Regula, M. Lancin, H. Idrissi, B. Pichaud, J. Douin, Philosophical Magazine Letters 85 (2005) 259.

DOI: 10.1080/09500830500157686

Google Scholar

[6] G. Feng, J. Suda, T. Kimoto, Applied Physics Letters 94 (2009) 091910.

Google Scholar

[7] H. Tsuchida, I. Kamata, M. Nagano, Material Science Forum 600-603 (2009) 267.

Google Scholar

[8] M. Dudley, N. Zhang, Y. Zhang, B. Raghothamachar, E.K. Sanchez, Material Science Forum 645-648 (2010) 295.

Google Scholar

[9] E.K. Sanchez, J.Q. Liu, M. De Graef, M. Skowronski, W.M. Vetter, M. Dudley, Journal of Applied Physics 91 (2002) 1143.

Google Scholar