Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy

Toshiyuki Isshiki; Masaki Hasegawa

doi:10.4028/www.scientific.net/MSF.778-780.402

Paper Titles

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

Nanoscale Characterization of SiC Interfaces and Devices
p.407

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
p.424

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Non Destructive Inspection of Dislocations in SiC...

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy

Abstract:

A mirror electron microscopy (MPJ) was developed for defect inspection in silicon carbide (SiC) wafer as non destructive, high spatial resolution and high throughput method. Each of three type dislocations, threading screw dislocation (TSD), threading edge dislocation (TED) and basal plane dislocations (BPD) in 4H-SiC wafer were identified in MPJ image as a dark dot with different type of tailing. This new method provides high performance inspection of defects in SiC possible without specimen pre-treatment.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

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402-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.402

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Online since:

February 2014

Authors:

Toshiyuki Isshiki*, Masaki Hasegawa

Keywords:

Dislocation, Mirror Projection Electron Microscopy, Non Destructive Inspection, Silicon Carbide (SiC)

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