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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Accurate Characterization of Interface State...

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

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Abstract:

We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (Cψ_S method). We have investigated correlation between the interface state density (D_IT) evaluated by the Cψ_S method and MOSFET performance, and found that the D_IT(Cψ_S) was well reflected in MOSFET performance. Very fast interface states which are generated by nitridation restricted the improvement of subthreshold slope and field-effect mobility.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

418-423

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.418

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Online since:

February 2014

Authors:

Hironori Yoshioka*, Takashi Nakamura, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura, Tsunenobu Kimoto

Keywords:

Conductance, Field-Effect Mobility, Impedance, Interface State, MOS Capacitor, MOSFET, No Anneal, Pyrogenic Oxidation, Silicon Carbide (SiC), Subthreshold Slope

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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