Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Sebastian Roensch; Stefan Hertel; Sergey A. Reshanov; Adolf Schöner; M. Krieger; Heiko B. Weber

doi:10.4028/www.scientific.net/MSF.778-780.436

Paper Titles

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility
p.418

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
p.424

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
p.428

Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
p.432

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
p.436

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
p.440

Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
p.444

Influence of P⁺-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
p.449

Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
p.453

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Drain-Current Deep Level Transient Spectroscopy...

Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors

Abstract:

The electrically active deep levels in a graphene / silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (I_D-DLTS). An evaluation procedure for I_D-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E₁/E₂, E_i and Z₁/Z₂ in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.