Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

Manato Deki; Takahiro Makino; Kazutoshi Kojima; Takuro Tomita; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.778-780.440

Paper Titles

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO₂/4H-SiC Structures Close to the Conduction Band Edge
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Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors
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Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes
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Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
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Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
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Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS Structures
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Influence of P⁺-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers
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Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
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Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-Membrane
p.457

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Single Event Gate Rupture in SiC MOS Capacitors...

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

Abstract:

The leakage currents through the gate oxide of MOS capacitors fabricated on n-type 4H-Silicon Carbide (SiC) was measured under accumulation bias conditions with heavy-ion irradiation. The Linear Energy Transfer (LET) dependence of the critical electric field (E_cr) at which dielectric breakdown occurred in these capacitors with two different oxide thicknesses was evaluated. The MOS capacitors with thin gate oxide showed higher E_cr values than those with thick gate oxide. The linear relationship between the reciprocal E_cr and LET was observed for both MOS capacitors. The slope of LET dependence of 1/E_cr for SiC MOS capacitors was smaller than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

440-443

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.440

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Online since:

February 2014

Authors:

Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima*

Keywords:

Heavy Ion Irradiation, Metal-Oxide-Semiconductor (MOS) Capacitor, Single Event Gate Rupture

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