Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

Yun Ji Shin; Soo In Kim; Hyeon Jin Jung; Chang Woo Lee; Wook Bahng

doi:10.4028/www.scientific.net/MSF.778-780.394

Paper Titles

Micro-Raman Characterization of 4H-SiC Stacking Faults
p.378

Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
p.382

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
p.386

Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) Substrate
p.390

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer
p.394

Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray Topography
p.398

Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
p.402

Nanoscale Characterization of SiC Interfaces and Devices
p.407

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.414

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Nanomechanical Analysis of Triangular Defect in...

Nanomechanical Analysis of Triangular Defect in 4H-SiC Epilayer

Abstract:

We report an investigation of the formation of triangular defects (TDs) in 4H–SiC expitaxial layers using Kelvin probe force microscopy (KPFM) and a nano-indenter. The results provide valuable information on the crystallographic structure, including the polytype nature of the TDs and surface potential profile. The TDs were also characterized using micro-Raman spectroscopy and high-resolution transmission electron microscopy. We found that the TDs were composed of a thick 3C-SiC band, as well as stacking faults (SFs) in the 4H-SiC epilayer.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

394-397

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.394

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Online since:

February 2014

Authors:

Yun Ji Shin*, Soo In Kim, Hyeon Jin Jung, Chang Woo Lee, Wook Bahng

Keywords:

3C Inclusion, 3C Stacking Fault, KPFM, Micro-Raman Spectroscopy, Nanoindenter, Transmission Electron Microscopy (TEM), Triangular Defect

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