Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

Manato Deki; Tomoki Oka; Shodai Takayoshi; Yoshiki Naoi; Takahiro Makino; Takeshi Ohshima; Takuro Tomita

doi:10.4028/www.scientific.net/MSF.778-780.661

Paper Titles

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Temperature Dependence of Electric Conductivities...

Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

Abstract:

Temperature dependence of the femtosecond laser modified region on silicon carbide was measured. The current-voltage characteristics showed the ohmic properties and thus we could evaluate the specific resistance for each irradiation conditions and the measured temperatures. The specific resistance was increased with decreasing temperature. From the double exponential fit to the temperature dependence of the specific resistance, the trapping energy of the impurity levels formed by the femtosecond laser modification was found to be 4.5 meV and 51.4 meV.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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661-664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.661

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Online since:

February 2014

Authors:

Manato Deki, Tomoki Oka, Shodai Takayoshi, Yoshiki Naoi, Takahiro Makino, Takeshi Ohshima, Takuro Tomita*

Keywords:

Electrical Conductivity, Exponential Increase, Femtosecond Laser Modification, Temperature Dependence

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