Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials

Satoshi Torimi; Satoru Nogami; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.778-780.673

Paper Titles

Al⁺Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
p.657

Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide
p.661

Comparative Study of the Current Transport Mechanisms in Ni₂Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC
p.665

Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC
p.669

Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials
p.673

Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
p.677

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
p.681

Electrical Properties of Mg-Implanted 4H-SiC
p.685

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n⁺ 4H-SiC
p.689

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Development of a Novel Cap-Free Activation...

Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials

Abstract:

As a new post-implantation activation annealing of Silicon Carbide (SiC), we propose the Si-vapor ambient anneal using Tantalum Carbide / metal Tantalum composite materials (TaC/Ta). In this technique, semi-closed TaC/Ta container which can supply Si-vapor ambient is used, and Si vapor compensates thermal desorption Si atoms from the SiC surface above 1500°C and can maintain the original surface morphology by controlling a process temperature and Ar back pressure. Therefore the Si-vapor ambient anneal is able to simplify the process of conventional activation anneal methods using refractory cap-layers for protecting SiC surface from thermal damage of Si-atom desorption. Experiments were performed under Ar 1.3kPa at 1600/1700°C for 5min optimized conditions in a 6inch TaC/Ta container, and the Al⁺ ion-implanted 4H-SiC properties after annealing were characterized by atomic force microscopy (AFM), Rutherford Back-scattering Spectrometry (RBS) channeling method, and four-point probe method. According to evaluation, there was no roughening of SiC surface from AFM topographic images and recovery of crystallinity at the ion-implanted layer was equivalent to by the conventional cap-layer method from RBS channeling measurement. The sheet resistance of 12kΩ/ at 1700°C equal to the typical Al⁺ ion implanted p-type SiC is confirmed by four-point probe method.