Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC

Wijemuni De Silva; Tadashi Sato; Shin Ichiro Kuroki; Takamaro Kikkawa

doi:10.4028/www.scientific.net/MSF.778-780.689

Paper Titles

Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials
p.673

Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
p.677

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
p.681

Electrical Properties of Mg-Implanted 4H-SiC
p.685

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n⁺ 4H-SiC
p.689

On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts
p.693

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
p.697

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
p.702

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Low Resistance Ohmic Contact Formation of Ni...

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n⁺ 4H-SiC

Abstract:

In this work, a partial amorphization is introduced to form a Nickel silicide ohmic contact for 4H-SiC bottom electrode. In a conventional Nickel silicide electrode, a carbon agglomeration at the silicide/SiC interface has been occured, and contant resistance between Ni silicide and SiC substrate became larger. For the reduction of the contact resistance, the partial amorphization of surface of SiC substrate was introduced. By this partial amorphization, the space position of the carbon agglomeration is controlled, and contact resistance can be reduced. As a result, with an amorphous 100 nm line pattern, a reliable contact resistance of 1.9×10^-3Ωcm² was realized.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.689

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Online since:

February 2014

Authors:

Wijemuni De Silva*, Tadashi Sato, Shin Ichiro Kuroki, Takamaro Kikkawa

Keywords:

Ion-Implantation, Ni Silicide, Ohmic Contact

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