Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors

Stefan Noll; Martin Rambach; Michael Grieb; Dick Scholten; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.778-780.702

Paper Titles

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Effect of Shallow n-Doping on Field Effect...

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors

Abstract:

A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

702-705

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.702

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Online since:

February 2014

Authors:

Stefan Noll*, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, Lothar Frey

Keywords:

4H-SiC MOSFET, Doping, Threshold Voltage

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