Junction Formation via Direct Bonding of Si and 6H-SiC

Yukihiro Sasada; Takamasa Kurumi; Hideo Shimizu; Hiroyuki Kinoshita; Masahiro Yoshimoto

doi:10.4028/www.scientific.net/MSF.778-780.714

Paper Titles

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
p.697

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
p.702

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
p.710

Junction Formation via Direct Bonding of Si and 6H-SiC
p.714

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures
p.718

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water
p.722

Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process
p.726

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
p.730

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Junction Formation via Direct Bonding of Si and 6H-SiC

Abstract:

Si wafers were directly bonded to 6H-SiC wafers without the formation of an intermediate layer. Heterojunctions of n-Si/n-SiC and p-Si/n-SiC exhibited ohmic and rectifying characteristics, respectively, as expected based on their band lineups. Band bending of Si at the bonded interface was observed for Si/semi-insulating 6H-SiC heterointerfaces. This band bending can be explained by either heterojunction formation based on Anderson’s model or the existence of negative charge with a density of ~2 × 10¹⁰ cm⁻² at the Si/SiC interface.