I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures

Shota Nishida; Jian Bo Liang; Masashi Morimoto; Naoteru Shigekawa; Manabu Arai

doi:10.4028/www.scientific.net/MSF.778-780.718

Paper Titles

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
p.702

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
p.710

Junction Formation via Direct Bonding of Si and 6H-SiC
p.714

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures
p.718

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water
p.722

Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process
p.726

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
p.730

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
p.734

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780I - V Characteristics in Surface-Activated Bonding...

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures

Abstract:

The physical and electrical properties of p⁺-Si/n-4H-SiC and n⁺-Si/n-4H-SiC heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V) and breakdown characteristics measurements at raised ambient temperatures. The I-V characteristics for the reverse bias voltages of the two junctions were compared with the expectations based on Frenkel-Poole, and trap-assisted tunneling models. The results of calculations using the trap-assisted tunneling model were close to the measurements.

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Materials Science Forum (Volumes 778-780)

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718-721

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.718

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Online since:

February 2014

Authors:

Shota Nishida*, Jian Bo Liang, Masashi Morimoto, Naoteru Shigekawa, Manabu Arai

Keywords:

Current-voltage characteristics, Heterojunction, Si, Silicon Carbide (SiC), Surface-Acivated Bonding, Trap-Assisted Tunneling

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