Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas

Yusuke Fukumoto; Hitoshi Habuka; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.778-780.734

Paper Titles

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures
p.718

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water
p.722

Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process
p.726

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
p.730

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
p.734

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
p.738

Investigation of Trenched and High Temperature Annealed 4H-SiC
p.742

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH
p.746

Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
p.750

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Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas

Abstract:

The C-face (0001) 4H-SiC surface morphology produced by etching using chlorine trifluoride gas was studied, focusing on the influence of the off-orientation. The etching pit at the 4^o off-oriented surface was formed at a temperature higher than 973 K, which was higher than 623 K for the on-axis surface. At 1073 K, the hexagonal-shaped etching pits were observed after the etching at the chlorine trifluoride gas concentration of less than 3 %. In the temperature range lower than 900 K, the mirror surface could be maintained after the etching. Thus, the mirror surface and the pitted surface are expected to be formed on the 4^o off-oriented surface by means of appropriately adjusting the parameters, such as the temperature and the chlorine trifluoride gas concentration.