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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Hydrogen Effects in ECR-Etching of 3C-SiC(100)...

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures

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Abstract:

An anisotropic etching process for mesa structures using fluorinated plasma with hydrogen addition was developed in an electon cyclotron resonance setup. The evolution of the mesa morphology was studied in dependence on the gas composition, the applied bias and the pressure. The achieved side wall slope approached 90° with a negligible trenching. The aspect ratios of the fabricated structure in the developed residue free ECR plasma etching process were between 5 and 20.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

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730-733

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https://doi.org/10.4028/www.scientific.net/MSF.778-780.730

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Online since:

February 2014

Authors:

Lars Hiller, Thomas Stauden, Ricarda M. Kemper, Jörg K.N. Lindner, Donat J. As, Jörg Pezoldt*

Keywords:

Electron Beam Lithography, Electron Cyclotron Resonance Etching, Plasma Etching

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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