Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

Dairi Yajima; Hitoshi Habuka; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.778-780.738

Paper Titles

4H-SiC Planarization Using Catalyst-Referred Etching with Pure Water
p.722

Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching Process
p.726

Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa Structures
p.730

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
p.734

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
p.738

Investigation of Trenched and High Temperature Annealed 4H-SiC
p.742

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH
p.746

Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
p.750

A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives
p.754

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Development of Silicon Carbide Dry Etcher Using...

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

Abstract:

A SiC dry etching reactor using chlorine trifluoride (ClF₃) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF₃ gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.