Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Marek Wzorek; Andrzej Czerwiński; Jacek Ratajczak; Michał A. Borysiewicz; Andrian V. Kuchuk; Anna B. Piotrowska; Jerzy Kątcki

doi:10.4028/www.scientific.net/MSF.778-780.697

Paper Titles

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
p.681

Electrical Properties of Mg-Implanted 4H-SiC
p.685

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n⁺ 4H-SiC
p.689

On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts
p.693

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
p.697

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
p.702

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
p.710

Junction Formation via Direct Bonding of Si and 6H-SiC
p.714

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Microstructure Characterization of Si/Ni Contact...

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Abstract:

Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni₂Si phase significantly contribute to degradation of surface morphology.

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Materials Science Forum (Volumes 778-780)

Pages:

697-701

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.697

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Online since:

February 2014

Authors:

Marek Wzorek*, Andrzej Czerwiński, Jacek Ratajczak, Michał A. Borysiewicz, Andrian V. Kuchuk, Anna B. Piotrowska, Jerzy Kątcki

Keywords:

Nickel, Ohmic Contacts, SEM, Silicon, Silicon Carbide (SiC), Transmission Electron Microscopy (TEM), XEDS

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References

[1] F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno, Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide, Microelectron. Eng. 60 (2002) 269-282.

DOI: 10.1016/s0167-9317(01)00604-9

Google Scholar

[2] A. Hähnel, E. Pippel, V. Ischenko, J. Woltersdorf, Nanostructuring in Ni/SiC reaction layers, investigated by imaging of atomic columns and DFT calculations, Mat. Chem. Phys. 114 (2009) 802-808.

DOI: 10.1016/j.matchemphys.2008.10.060

Google Scholar

[3] Ts. Marinova, A. Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi, Gy. Vincze, Nickel based ohmic contacts on SiC, Mat. Sc. Eng. B46 (1997) 223-226.

DOI: 10.1016/s0921-5107(96)01981-2

Google Scholar

[4] A.V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko, A. Piotrowska, Long-term stability of Ni-silicide ohmic contact to n-type 4H-SiC, Microelectron. Eng. 85 (2008) 2142-2145.

DOI: 10.1016/j.mee.2008.04.011

Google Scholar

[5] A.V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko, A. Piotrowska, Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions, Mat. Sc. Eng. B165 (2009) 38-41.

DOI: 10.1016/j.mseb.2008.12.011

Google Scholar

[6] M. Wzorek, A. Czerwinski, A. Kuchuk, J. Ratajczak, A. Piotrowska, J. Kątcki, TEM characterisation of silicide phase formation in Ni-based ohmic contacts to 4H n-SiC, Mat. Trans. 52 (2011) 315-318.

DOI: 10.2320/matertrans.mb201014

Google Scholar

[7] C.V. Thompson, H. Kahn, Effects of microstructure on interconnect and via reliability: multimodal failure statistics, J. Elec. Mat. 22 (1998) 581-587.

DOI: 10.1007/bf02666402

Google Scholar

[8] B. Predel, Ni-Si (Nickel-Silicon), in: Landolt-Börnstein – Group IV Physical Chemistry 5I, 1998, pp.1-5.

DOI: 10.1007/10542753_2263

Google Scholar