On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

Michael R. Jennings; Craig A. Fisher; David Walker; Ana Sanchez; Amador Pérez-Tomás; Dean P. Hamilton; Peter Michael Gammon; Susan E. Burrows; Stephen M. Thomas; Yogesh K. Sharma; Fan Li; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.778-780.693

Paper Titles

Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
p.677

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
p.681

Electrical Properties of Mg-Implanted 4H-SiC
p.685

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n⁺ 4H-SiC
p.689

On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts
p.693

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
p.697

Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
p.702

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC
p.706

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes
p.710

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780On the Ti3SiC2 Metallic Phase Formation for Robust...

On the Ti₃SiC₂ Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

Abstract:

This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being to examine their ruggedness under high temperature conditions. XRD, FIB-TEM and SEM are techniques that have been utilized to examine the microstructure and interface properties respectively. A detailed physical study revealed the presence of a crystalline hexagonal Ti layer orientated in the same direction as the 4H-SiC epitaxial layer. This factor seems to be important in terms of electrical performance, having the lowest measured specific contact resistivity of 1x10^-6 Ωcm². We attribute this to the optimized formation of Ti₃SiC₂ at the metal/SiC interface. An initial high temperature study shows thermionic emission occurring across the metal/semiconductor junction.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.693

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Online since:

February 2014

Authors:

Michael R. Jennings, Craig A. Fisher, David Walker, Ana Sanchez, Amador Pérez-Tomás, Dean P. Hamilton, Peter Michael Gammon, Susan E. Burrows, Stephen M. Thomas, Yogesh K. Sharma, Fan Li, Philip Andrew Mawby

Keywords:

Ohmic Contact, Silicide, Silicon Carbide (SiC), Ti₃SiC₂

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