Electrical Properties of Mg-Implanted 4H-SiC

Abstract:

Because Al and B (elements of III group) in SiC are deep-level acceptors and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (element of II group) that may emit two holes into the valence band is investigated. A p-type 4H-SiC layer is obtained by 1800 °C annealing of the Mg-implanted layer, not by 1600 and 1700 °C annealing. It is found that a Mg acceptor level in 4H-SiC is too deep to determine the reliable density and energy level of the Mg acceptor using the frequently-used occupation probability, i.e., the Fermi-Dirac distribution function. Using the distribution function including the influence of the excited states of the Mg acceptor, therefore, its density and energy level can be determined to be approximately 1×10¹⁹ cm^-3 and 0.6 eV, respectively. Judging from the Mg implantation condition, the obtained values are considered to be reliable.

• Periodical: Materials Science Forum (Volumes 778-780)
• Pages: 685-688
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.778-780.685
• Online since: February 2014
• Authors: Hideharu Matsuura*, Tatsuya Morine, Shinji Nagamachi
• Keywords: Distribution Function for Deep Acceptor, Mg Acceptor, Mg Acceptor Level, Mg Implantation, Mg-Implanted 4H-SiC

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