Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC

Hideto Tamaso; Shunsuke Yamada; Hiroyuki Kitabayashi; Taku Horii

doi:10.4028/www.scientific.net/MSF.778-780.669

Paper Titles

Microwave Annealing of Al⁺ Implanted 4H-SiC: Towards Device Fabrication
p.653

Al⁺Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
p.657

Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide
p.661

Comparative Study of the Current Transport Mechanisms in Ni₂Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC
p.665

Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC
p.669

Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials
p.673

Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
p.677

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C
p.681

Electrical Properties of Mg-Implanted 4H-SiC
p.685

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Ti/Al/Si Ohmic Contacts for both n-Type and p-Type...

Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiC

Abstract:

An ohmic contact process by using tri-layer materials for a source contact of a silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is proposed. The authors validate its extremely low contact resistance for both n-type and p-type SiC by a simple process. The characteristics of Ti/Al/Si ohmic contacts were measured by using the transfer length method (TLM). We examined the dependence of the contact resistance on the thickness of each layer of Ti/Al/Si. Then, it is found that Ti/Al/Si contacts with an appropriate thickness show excellent ohmic properties for both n-type and p-type SiC. N-type specific contact resistance (ρ_n) of 3.7 × 10^-6Ω cm² and p-type specific contact resistance (ρ_p) of 1.7 × 10^-4Ω cm² are obtained with Ti (20 nm) /Al (30 nm) /Si (30 nm).