Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

Hiroaki Hanafusa; Akio Ohta; Ryuuhei Ashihara; Keisuke Maruyama; Tsubasa Mizuno; Shohei Hayashi; Hideki Murakami; Seiichiro Higashi

doi:10.4028/www.scientific.net/MSF.778-780.649

Paper Titles

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
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Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
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n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing
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Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer
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Microwave Annealing of Al⁺ Implanted 4H-SiC: Towards Device Fabrication
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Al⁺Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation
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Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide
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Comparative Study of the Current Transport Mechanisms in Ni₂Si Ohmic Contacts on n- and p-Type Implanted 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Properties of Al Ohmic Contacts to n-type 4H-SiC...

Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

Abstract:

Contact property of aluminum and 4H-SiC wafer with crystallized amorphous-silicon (a-Si) interlayer was investigated. A phosphorus-doped a-Si layer on SiC wafer was crystallized by annealing at 1377 °C. Good ohmic contact behavior and contact resistivity of 2.1 × 10^-6Ωcm² were obtained without silicidation annealing process. Furthermore, non-doped crystallized a-Si layer insertion layer also showed ohmic contact property. However, high contact resistivity of 8.2×10^-4Ωcm² was obtained in the non-doped a-Si sample. X-ray photo-electron spectroscopy analysis suggests that conduction band offset is significantly reduced between crystallized a-Si and SiC wafer. Therefore, a-Si insertion layer is effective for Schottky barrier height decreasing and high doping into Si layer forms low contact resistivity between Al and SiC, indirectly.

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Materials Science Forum (Volumes 778-780)

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649-652

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.649

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Online since:

February 2014

Authors:

Hiroaki Hanafusa*, Akio Ohta, Ryuuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, Seiichiro Higashi

Keywords:

Amorphous Silicon, Hetero-Junction, Ohmic Contact, Silicon Carbide (SiC)

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