Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

Yoshiyuki Akahane; Takuo Kano; Kyosuke Kimura; Hiroki Komatsu; Yukimune Watanabe; Tomohiko Yamakami; Kiichi Kamimura

doi:10.4028/www.scientific.net/MSF.778-780.631

Paper Titles

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
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NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
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Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
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Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
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Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
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Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric
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Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
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n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing
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Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Preparation and Characterization of Nitridation...

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

Abstract:

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO₂ film was deposited on the nitridation layer to form SiO₂/nitride/SiC structure. The interface state density of the SiO₂/nitride/SiC structure was lower than that of the SiO₂/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

631-634

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.631

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Online since:

February 2014

Authors:

Yoshiyuki Akahane*, Takuo Kano, Kyosuke Kimura, Hiroki Komatsu, Yukimune Watanabe, Tomohiko Yamakami, Kiichi Kamimura

Keywords:

MIS, Nitride, TEOS

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