Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures

Daniel Haasmann; Sima Dimitrijev; Ji Sheng Han; Alan Iacopi

doi:10.4028/www.scientific.net/MSF.778-780.627

Paper Titles

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
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Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
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NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
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Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
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Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
p.631

Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric
p.635

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts
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n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser Processing
p.645

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Growth of Gate Oxides on 4H-SiC by NO at Low...

Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures

Abstract:

In an attempt to significantly reduce the amount of nitric oxide (NO), commonly used to improve the quality of gate oxides on 4H–SiC, a series of alternative gate oxidation processes using a combination of O₂ and NO gas mixtures at low partial pressures were investigated. The properties of 4H–SiC/SiO₂ interfaces on n-type MOS capacitors were examined by the measurement of accumulation conductances over a range of frequencies. Oxide integrity was evaluated by current–voltage measurements and by the extraction of the conduction band offset barrier heights through Fowler–Nordheim (F–N) analysis. A notable reduction of accumulation conductance, indicating a reduction of near-interface traps (NITs), was observed over all measured frequencies for oxidation processes containing NO with a partial-pressure of only 2%. Gate oxides grown in mixture of O₂ and NO at low-partial-pressures demonstrated a considerable improvement of dielectric properties, increasing the barrier height to near theoretical values.

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Materials Science Forum (Volumes 778-780)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.627

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Online since:

February 2014

Authors:

Daniel Haasmann*, Sima Dimitrijev, Ji Sheng Han, Alan Iacopi

Keywords:

4H-SiC, Channel Mobility, Near Interface Traps, Oxidation, SiC/SiO₂ Interface

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