NF3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation

Ryu Hasunuma; Masahito Nagoshi; Kikuo Yamabe

doi:10.4028/www.scientific.net/MSF.778-780.619

Paper Titles

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
p.611

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
p.615

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
p.623

Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
p.627

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
p.631

Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric
p.635

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780NF3 Added Oxidation of 4H-SiC(0001) and...

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation

Abstract:

The electrical properties of SiO₂/4H-SiC(0001) was characterized, and it was confirmed that the NF₃ added oxidation in O₂ can achieve interface with low interface state density. Optimization of NF₃ added oxidation process was attempted to obtain films with both good interface properties and low leakage current. It was concluded that optimization of oxidation process should take account of obtaining proper balance among the rate of oxidation, which generates impurity carbon, the ability of carbon removal, and the rate of SiO₂ etching which also affects the leakage characteristics.