Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Keiko Ariyoshi; Shinsuke Harada; Junji Senzaki; Takahito Kojima; Kazutoshi Kojima; Yasunori Tanaka; Takashi Shinohe

doi:10.4028/www.scientific.net/MSF.778-780.615

Paper Titles

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
p.599

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
p.611

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
p.615

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

Characterization of SiO₂/SiC Interfaces Annealed in N₂O or POCl₃
p.623

Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures
p.627

Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation
p.631

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Nitridation Effects of Gate Oxide on Channel...

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Abstract:

We have studied gate oxide processes for SiC trench MOSFETs. It is demonstrated that nitridation of gate oxide is effective to suppress the variation of channel mobility depending on channel plane orientation and substrate off-angles. In addition, improved channel mobility has been obtained by the combined process of NH₃ and N₂O POA.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

615-618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.615

Citation:

Cite this paper

Online since:

February 2014

Authors:

Keiko Ariyoshi*, Shinsuke Harada, Junji Senzaki, Takahito Kojima, Kazutoshi Kojima, Yasunori Tanaka, Takashi Shinohe

Keywords:

(11-20), Channel Mobility, Gate Oxide, Nitridation, Trench MOSFET, UMOSFET

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S. Harada, S. Ito, M. Kato, A. Takatsuka, K. Kojima, K. Fukuda and H. Okumura, Mater. Sci. Forum 645-648 (2010) 999-1004.

DOI: 10.4028/www.scientific.net/msf.645-648.999

Google Scholar

[2] H. Yano, H. Nakao, H. Mikami, T. Hatayama, Y. Uraoka and T. Fuyuki, Appl. Phys. Lett. 90 (2007) 042102.

DOI: 10.1063/1.2434157

Google Scholar

[3] S. Harada, R. Kosugi, J. Senzaki, W. J. Cho, K. Fukuda and K. Arai, J. Appl. Phys. 91 (2002) 1568-1571.

Google Scholar

[4] F. Moscatelli, A. Poggi, S. Solmi and R. Nipoti, IEEE Trans. Electron Devices 55 (2008) 961-967.

DOI: 10.1109/ted.2008.917107

Google Scholar

[5] N. Soejima, T. Kimura, T. Ishikawa and T. Sugiyama, Mater. Sci. Forum 740-742 (2013) 723-726.

Google Scholar

[6] T. Kimura, T. Ishikawa, N. Soejima, K. Nomura and T. Sugiyama, Mater. Sci. Forum 740-742 (2013) 737-740.

Google Scholar

[7] E. C. Carr, K. A. Ellis and R. A. Buhrman, Appl. Phys. Lett. 66 (1995) 1492-1494.

Google Scholar

[8] A. Gupta, S. Toby, E. P. Gusev, H. C. Lu, Y. Li, M. L. Green, T. Gustafsson, and E. Garfunkel, Prog. Surf. Sci. 59 (1998) 103-195.

Google Scholar

[9] P. Jamet, S. Dimitrijev and P. Tanner, J. Appl. Phys. 90 (2001) 5058-5063.

Google Scholar

[10] Y. Nanen, M. Kato, J. Suda and T. Kimoto, IEEE Trans. Electron Devices 60 (2013) 1260-1262.

DOI: 10.1109/ted.2012.2236333

Google Scholar

[11] H. C. Lu, E. P. Gusev, E. Garfunkel, B. W. Busch, T. Gustafsson, T. W. Sorsch and M. L. Green, J. Appl. Phys. 87 (2000) 1550-1555.

Google Scholar

[12] E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, M. L. Green, D. Brasen and W. N. Lennard, J. Appl. Phys. 84 (1998) 2980-2982.

Google Scholar

[13] N. S. Saks, D. I. Ma and W. B. Fowler, Appl. Phys. Lett. 67 (1995) 374-376.

Google Scholar