Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy

E.Ö. Sveinbjörnsson; Olafur Gíslason

doi:10.4028/www.scientific.net/MSF.778-780.603

Paper Titles

Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
p.587

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
p.591

Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
p.595

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
p.599

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial Wafers
p.611

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs
p.615

NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
p.619

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Deep Traps in 4H-SiC MOS Capacitors Investigated...

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy

Abstract:

Using Deep Level Transient Spectroscopy (DLTS) on n-type MOS capacitors we find that thermal oxidation of 4H-SiC produces deep traps at or near the SiO₂/SiC interface with two well defined DLTS peaks. The traps are located ~ 0.85 V and ~ 1.0 eV below the SiC conduction band edge and are present in wet and dry oxides as well as oxides produced by sodium enhanced oxidation and oxides grown in N₂O. The deep traps are located at the SiO/SiC interface after oxidation at 1150°C but do extend further into the SiC epilayer after oxidation at 1240°C. We identify these traps as ON1 and ON2 which been observed in epitaxial layers after oxidation at very high temperatures (1200-1500°C) [.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.603

Citation:

Cite this paper

Online since:

February 2014

Authors:

E.Ö. Sveinbjörnsson*, Olafur Gíslason

Keywords:

DLTS, Interface State, MOS, Oxidation Induced Deep Levels

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. Kawahara, Ph.D. thesis, Kyoto University, Japan (2013).

Google Scholar

[2] T. Hiyoshi and T. Kimoto, Applied Physics Express 2, 041101 (2009).

Google Scholar

[3] N.T. Son, X.T. Trinh, L.S. Lovlie, B.G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, and E. Janzen, Phys. Rev. Lett. 109, 187603 (2012).

Google Scholar

[4] H.Ö. Ólafsson, F. Allerstam and E.Ö. Sveinbjörnsson, Mater. Sci. Forum 389-393, 1005 (2002).

Google Scholar