Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

Matthieu Florentin; Josep Montserrat; Pierre Brosselard; Anne Henry; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.778-780.591

Paper Titles

Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
p.575

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
p.579

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
p.583

Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
p.587

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
p.591

Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
p.595

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors
p.599

Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
p.603

4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400°C
p.607

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Rapid Thermal Oxidation of Si-Face N and P-Type...

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

Abstract:

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO₂/SiC interface.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

591-594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.591

Citation:

Cite this paper

Online since:

February 2014

Authors:

Matthieu Florentin*, Josep Montserrat, Pierre Brosselard, Anne Henry, Philippe Godignon

Keywords:

4H-SiC, Electrical Parameters, MOS Capacitor, MOSFET, On-Axis, Oxidation, RTP, Si-Face, SiO₂/SiC Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. Fukuda et al. High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C (000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle, Materials Science Forum, 527-529, 1043 (2006).

DOI: 10.4028/www.scientific.net/msf.527-529.1043

Google Scholar

[2] A. Constant et al. Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using NO and rapid thermal processing steps, Applied Physics Letters, 94, 063508 (2009).

DOI: 10.1063/1.3077016

Google Scholar

[3] E. Nicollian, MOS Physics and Technology, p.331, John Wiley & Sons, NewYork (1982).

Google Scholar

[4] S. Dhar et al, Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface, Mater. Sci. Forum 527, 949 (2006).

Google Scholar

[5] J. N. Shenoy, Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO< inf> 2</inf>/SiC interface, J. Appl. Phys. 79, 3042 (1996).

DOI: 10.1063/1.361244

Google Scholar

[6] S. Berberich, Ph.D. Dissertation, Autonomous Univ. of Barcelona, Ch3, p.46. (2000).

Google Scholar

[7] URL: http: /www. depauw. edu/files/resources/module6. PDF.

Google Scholar

[8] K. Matocha Challenges in SiC power MOSFET design, Solid-State Elect, 1631 (2008).

DOI: 10.1016/j.sse.2008.06.034

Google Scholar

[9] A. Ortiz-Conde et al., A Review of Recent MOSFET Threshold Voltage Extraction Methods, Microelectronics Reliability, Vol. 42, Issue 4-5, pp.583-596, (2002).

DOI: 10.1016/s0026-2714(02)00027-6

Google Scholar