Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Mitsuru Sometani; Dai Okamoto; Shinsuke Harada; Hitoshi Ishimori; Shinji Takasu; Tetsuo Hatakeyama; Manabu Takei; Yoshiyuki Yonezawa; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.579

Paper Titles

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation
p.562

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending
p.566

MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET
p.571

Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
p.575

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
p.579

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
p.583

Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
p.587

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
p.591

Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS Structures
p.595

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Conduction Mechanism of Leakage Current in Thermal...

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Abstract:

The conduction mechanism of the leakage current in thermal oxide on 4H-SiC was identified. The carrier separation current-voltage method clarified that electrons are the dominant carriers of the leakage current. The temperature dependence of the currentvoltage characteristics indicated that the conduction mechanism of the leakage current involved not only Fowler-Nordheim tunneling (FN) but also Poole-Frenkel (PF) emission. The PF emission current due to the existence of defects in the oxide increased with temperature.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

579-582

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.579

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Online since:

February 2014

Authors:

Mitsuru Sometani*, Dai Okamoto, Shinsuke Harada, Hitoshi Ishimori, Shinji Takasu, Tetsuo Hatakeyama, Manabu Takei, Yoshiyuki Yonezawa, Kenji Fukuda, Hajime Okumura

Keywords:

Conduction Mechanism, Fowler-Nordheim Tunneling, Gate Oxide, Leakage Current, Poole-Frenkel Emission

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