MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET

Shuichi Ono; Eiji Waki; Manabu Arai; Kimiyoshi Yamasaki; Shinichi Takagi

doi:10.4028/www.scientific.net/MSF.778-780.571

Paper Titles

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
p.553

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂
p.557

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation
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Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending
p.566

MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET
p.571

Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
p.575

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
p.579

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
p.583

Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
p.587

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MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET

Abstract:

The electron mobility and the surface carrier density in the channel layer of a C-face 4H-SiC MOSFET was studied using a Hall measurement and a split C-V measurement. Total surface carrier density and the effective mobility were extracted experimentally using the split C-V measurement. It was found that the difference of the peak Hall mobility and the peak effective mobility was less than 20%. And the total trap density was the order of the 10¹² cm^-2. The cause of the relatively small difference between the Hall mobility and the effective mobility was discussed.