Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending

Wei Huang; Xi Liu; Xue Chao Liu; Tian Yu Zhou; Shi Yi Zhuo; Yan Qing Zheng; Jian Hua Yang; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.778-780.566

Paper Titles

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
p.549

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
p.553

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂
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Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation
p.562

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending
p.566

MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET
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Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
p.579

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
p.583

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Nano-Scale Native Oxide on 6H-SiC Surface and its...

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending

Abstract:

Native oxide layer with thickness of about 1 nm was found easy to form on 6H-SiC surface during transporting from cleaning process to vacuum chambers, which was examined by x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). The interface band bending was studied by synchrotron radiation photoelectron spectroscopy (SRPES). For the native-oxide/SiC surface, after Ni deposition, the binding energy of Si 2p red-shifted about 0.34 eV, which suggested the upward bending of the interface energy band. Therefore, the native oxide layer should be considered on the study of SiC devices because it may affect the electron transport properties significantly.

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Materials Science Forum (Volumes 778-780)

Pages:

566-570

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.566

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Online since:

February 2014

Authors:

Wei Huang*, Xi Liu, Xue Chao Liu, Tian Yu Zhou, Shi Yi Zhuo, Yan Qing Zheng, Jian Hua Yang, Er Wei Shi

Keywords:

Band Bending, Interface, Native Oxide, Photoelectron Spectroscopy, Silicon Carbide (SiC)

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