Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

Jing Hua Xia; David M. Martin; Sethu Saveda Suvanam; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.778-780.549

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Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Characterization of LaxHfyO Gate Dielectrics in...

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor

Abstract:

La_xHf_yO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N₂O ambient. The result shows that high quality La_xHf_yO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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549-552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.549

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Online since:

February 2014

Authors:

Jing Hua Xia*, David M. Martin, Sethu Saveda Suvanam, Carl Mikael Zetterling, Mikael Östling

Keywords:

4H-SiC, ALD, Dielectric, High-k, MOS

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