Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

Atthawut Chanthaphan; Takuji Hosoi; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.778-780.541

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Degradation of SiO2/SiC Interface Properties due...

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing

Abstract:

The impact of mobile ions intrinsically generated in thermally grown SiO₂ by high-temperature forming gas annealing (FGA) on the SiO₂/4H-SiC interface properties was studied by means of electrical characterization of SiC metal-oxide-semiconductor (MOS) capacitors. Unlike Si devices, mobile ions located at the interfaces were found to cause a remarkable stretch-out of capacitance-voltage (C-V) curve near the accumulation condition, and the degree of stretch-out was more pronounced with increasing probe frequency. This suggests that the interface states with a long emission time constant are formed near the conduction band edge due to the mobile ions. To clarify this unusual phenomenon, several characterization techniques to evaluate interface state densities (D_it), including Terman, conductance, and C-ψ_s methods, were employed. The D_it values estimated for SiO₂/SiC interfaces with mobile ions were a few times as large as those without mobile ions.

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Materials Science Forum (Volumes 778-780)

Pages:

541-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.541

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Online since:

February 2014

Authors:

Atthawut Chanthaphan*, Takuji Hosoi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC, Bias-Temperature Instability, Forming Gas Annealing , Interface State Density, Mobile Ion, MOS Device

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References

[1] M.J. Marinella, D.K. Schroder, T. Isaacs-Smith, A.C. Ahyi, J.R. Williams, G.Y. Chung, J.W. Wan, M.J. Loboda, Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors, Appl. Phys. Lett. 90 (2007) 253508.

DOI: 10.1063/1.2748327

Google Scholar

[2] T. Okayama, S.D. Arthur, J.L. Garrett, M.V. Rao, Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs, Solid-State Electron 52 (2008)164.

DOI: 10.1016/j.sse.2007.07.031

Google Scholar

[3] A. Chanthaphan, T. Hosoi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe, Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures, Appl. Phys. Lett. 100 (2012) 252103.

DOI: 10.1063/1.4729780

Google Scholar

[4] A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe, Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions, Appl. Phys. Lett. 102 (2013).

DOI: 10.1063/1.4794942

Google Scholar

[5] D.K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., Wiley-IEEE Press, (2006).

Google Scholar

[6] H. Yoshioka, T. Nakamura, T. Kimoto, Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance, J. Appl. Phys. 111 (2012) 014502.

DOI: 10.1063/1.3673572

Google Scholar