Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Matthieu Florentin; Mihaela Alexandru; Aurore Constant; Bernd Schmidt; José Millan; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.778-780.525

Paper Titles

Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
p.507

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
p.537

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
p.541

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Low Energy Proton Radiation Impact on 4H-SiC...

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Abstract:

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

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Materials Science Forum (Volumes 778-780)

Pages:

525-528

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.525

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Online since:

February 2014

Authors:

Matthieu Florentin*, Mihaela Alexandru, Aurore Constant, Bernd Schmidt, José Millan, Philippe Godignon

Keywords:

Charge Trapping, Mobility, Proton Irradiation, SiC MOSFET, SiO₂/SiC Interface, Threshold Voltage, Time Bias Stress Instability

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