Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET

Zakariae Chbili; Pragya R. Shreshta; Jason P. Campbell; John S. Suehle; Dimitris E. Ioannou; Kin P. Cheung

doi:10.4028/www.scientific.net/MSF.778-780.529

Paper Titles

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
p.537

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
p.541

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
p.545

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Unexpected Effect of Thermal Storage Observed on...

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET

Abstract:

In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature treatment. The improvement in characteristics after storage at high temperature is believed to be due to instabilities caused by the quality of the SiO₂/SiC interface and its large density of defects.

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Materials Science Forum (Volumes 778-780)

Pages:

529-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.529

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Online since:

February 2014

Authors:

Zakariae Chbili*, Pragya R. Shreshta, Jason P. Campbell, John S. Suehle, Dimitris E. Ioannou, Kin P. Cheung

Keywords:

Charge Trapping, DMOSFET, Power Electronics, Reliability, Silicon Carbide (SiC), TDDB, Temperature Instability

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