Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces

Junji Senzaki; Atsushi Shimozato; Kazutoshi Kojima; Shinsuke Harada; Keiko Ariyoshi; Takahito Kojima; Yasunori Tanaka; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.521

Paper Titles

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
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Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
p.507

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
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Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Threshold Voltage Instability of SiC-MOSFETs on...

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces

Abstract:

Threshold voltage (V_TH) of SiC-MOSFETs on various crystal faces has been investigated systematically using the same bias-temperature-stress (BTS) conditions. In addition, dependences of gate-oxide-forming process on V_TH instability is also discussed. Nitridation treatments such as N₂O and NH₃ post-oxidation annealing (POA) are effective in stabilization of V_TH under both positive-and negative-BTS tests regardless of crystal face. On the other hand, serious V_TH instability was confirmed in MOSFETs with gate oxide by pyrogenic oxidation followed by H₂ POA.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

521-524

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.521

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Online since:

February 2014

Authors:

Junji Senzaki, Atsushi Shimozato, Kazutoshi Kojima, Shinsuke Harada, Keiko Ariyoshi, Takahito Kojima, Yasunori Tanaka, Hajime Okumura

Keywords:

A-Face, Bias-Temperature-Stress, C-Face, H₂ Anneal, Hydrogen-Related Species, MOSFET, N₂O Anneal, NH₃ Anneal, Threshold Voltage, V_TH Instability

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References

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