Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy

Koji Ashida; Tomonori Kajino; Yasunori Kutsuma; Noboru Ohtani; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.778-780.507

Paper Titles

High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
p.491

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
p.495

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
p.499

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
p.503

Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
p.507

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

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Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy

Abstract:

We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be determined by the SEM contrast.