Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC

Tomokatsu Watanabe; Shiro Hino; Yuji Ebiike; Naruhisa Miura; Masayuki Imaizumi; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.517

Paper Titles

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
p.499

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
p.503

Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
p.507

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Depletion-Mode TDDB for n-Type MOS Capacitors of...

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC

Abstract:

TDDB for n-type 4H-SiC MOS capacitors depleted by DC bias (named as depletion-mode TDDB) has been investigated. The lifetime distribution can apparently be classified into two groups: shorter and longer t_BD. Breakdown for the shorter t_BD occurs at a point close to a threading dislocation. In contrast, the capacitors possessing longer t_BDinclude no dislocation. An increase in the stress temperature and/or E_OX leads to a decrease in t_BD, indicating that the breakdown is caused by gate-oxide degradation. On the other hand, the t_BD distributions acquired by accumulation-mode TDDB are relatively even, and the breakdown point is independent of dislocations. We presume that holes excited in the SiC layer by hot electrons play an important role at a threading dislocation for depletion-mode TDDB.