Thin PSG Process for 4H-SiC MOSFET

Yogesh K. Sharma; Ayayi C. Ahyi; Tamara Isaacs-Smith; Aaron Modic; Yi Xu; Eric Granfukel; Michael R. Jennings; Craig Fisher; Stpehen M. Thomas; Philip  Andrew Mawby; Sarit Dhar; Leonard C. Feldman; John Williams

doi:10.4028/www.scientific.net/MSF.778-780.513

Paper Titles

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
p.495

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
p.499

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC
p.503

Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
p.507

Thin PSG Process for 4H-SiC MOSFET
p.513

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Thin PSG Process for 4H-SiC MOSFET

Thin PSG Process for 4H-SiC MOSFET

Abstract:

The use of phosphorous as a passivating agent for the SiO₂/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm²/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP₂O₇planar diffusion source is used to produce P₂O₅for the passivation of the interface. Incorporation of phosphorous into SiO₂leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm²/V.s.