Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

Ronald Green; Aivars J. Lelis; Damian P. Urciuoli; Marc Litz; James Carroll

doi:10.4028/www.scientific.net/MSF.778-780.533

Paper Titles

Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
p.517

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
p.537

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
p.541

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
p.545

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
p.549

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Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs

Abstract:

Commercial SiC MOSFETs were exposed to ionizing radiation to characterize the radiation response and to compare the observed threshold voltage (V_T) instability post-radiation exposure, with the V_T instability following bias temperature stress (BTS) testing. As expected, a large number of positively charged oxide traps were present in these devices following irradiation, resulting in a significant negative V_T shift. However, the observed V_T instability following irradiation was much smaller than that for similarly processed devices exposed to a BTS. Irradiated devices subjected to unbiased thermal treatments experienced a significant annealing of trapped holes above 100 °C. However, isochronal annealing treatments did not significantly alter the number of switching oxide traps, suggesting that a large portion of the traps activated by irradiation may lie deeper within the SiO₂, beyond the tunneling distance from the SiC.