Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Takahito Kojima; Shinsuke Harada; Keiko Ariyoshi; Junji Senzaki; Manabu Takei; Yoshiyuki Yonezawa; Yasunori Tanaka; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.778-780.537

Paper Titles

Threshold Voltage Instability of SiC-MOSFETs on Various Crystal Faces
p.521

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
p.525

Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFET
p.529

Radiation-Induced Trapped Charging Effects in SiC Power MOSFETs
p.533

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
p.537

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
p.541

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
p.545

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
p.549

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
p.553

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Reliability Improvement and Optimization of Trench...

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Abstract:

Reliability of gate oxide for trench-gate MOSFET was improved by deposited oxide film with uniform thickness and high-temperature annealing after trench etching. Optimum wafer orientation and trench direction for the trench gate was investigated, and the gate oxide on (11-20) plane of carbon face exhibited the longest lifetime. Influences by the roughness of sidewall and the radius of trench corner are discussed.