Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

Yasuto Hijikata; Yurie Akasaka; Shuhei Yagi; Hiroyuki Yaguchi

doi:10.4028/www.scientific.net/MSF.778-780.553

Paper Titles

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide
p.537

Degradation of SiO₂/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
p.541

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
p.545

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
p.549

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
p.553

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂
p.557

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation
p.562

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending
p.566

MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET
p.571

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Si Emission into the Oxide Layer during Oxidation...

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

Abstract:

To verify the Si emission phenomenon during oxidation of SiC, the behavior of Si atoms was investigated using HfO₂/SiC structures. At low oxygen pressure, i.e. the oxidation condition predominant to active oxidation, Si emission into oxide layer and the growth of SiO₂ on the oxide surface were clearly observed by TOF-SIMS. On the other hand, the growth of SiO₂ on the surface was suppressed under an ordinary pressure. These results evidence the Si emission during oxidation that is proposed in the Si and C emission model.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2013

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.553

Citation:

Cite this paper

Online since:

February 2014

Authors:

Yasuto Hijikata*, Yurie Akasaka, Shuhei Yagi, Hiroyuki Yaguchi

Keywords:

C Emission, Oxidation Mechanism, Si Emission, SiC-Oxide Interface

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] G. Y. Chung et al., IEEE Electron Device Lett. 22 (2001) 76.

Google Scholar

[2] Y. Hijikata, H. Yaguchi, and S. Yoshida, Appl. Phys. Express 2 (2009) 021203.

Google Scholar

[3] Y. Hijikata, H. Yaguchi, and S. Yoshida, Mater. Sci. Forum 645-648 (2010) 809.

Google Scholar

[4] Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida, Thermal oxidation mechanism of silicon carbide, in: Y. Hijikata (Ed. ), Physics and Technology of Silicon Carbide Devices, InTech, Croatia, 2013, chapter 7.

DOI: 10.5772/50748

Google Scholar

[5] C. Radtke et al., Appl. Phys. Lett. 92 (2008) 252909.

Google Scholar

[6] T. Hiyoshi and T. Kimoto, Appl. Phys. Express 2 (2009) 091101.

Google Scholar

[7] V. V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz, Phys. Status Solidi A 162 (1997) 321.

Google Scholar

[8] F. Devyncka and A. Pasquarello, Physica B 401–402 (2007) 556–559.

Google Scholar

[9] X. Shen and S. T. Pantelides, Appl. Phys. Lett. 98 (2011) 053507.

Google Scholar