Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation

Takuji Hosoi; Yusuke Uenishi; Yuki Nakano; Takashi Nakamura; Takayoshi Shimura; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.778-780.562

Paper Titles

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
p.545

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor
p.549

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
p.553

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO₂
p.557

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation
p.562

Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band Bending
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MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET
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Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
p.575

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
p.579

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Retarded Oxide Growth on 4H-SiC(0001) Substrates...

Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial Oxidation

Abstract:

The impact of a sacrificial oxidation treatment on subsequent gate oxide formation on 4H-SiC(0001) substrates was investigated. Although x-ray photoelectron spectroscopy (XPS) analysis revealed that the SiC surface after removing a 40-nm-thick sacrificial oxide by diluted HF solution was almost identical to that of an as-grown epilayer, the subsequent dry O₂ oxidation resulted in a thinner SiO₂ layer for the sample with the sacrificial oxidation in the ultrathin film regime (~3 nm). The metal-oxide-semiconductor (MOS) capacitor with sacrificial oxidation also exhibited a larger frequency dispersion in capacitance-voltage (C-V) characteristics, indicating that interface property had been degraded. However, when the oxide thickness reached about 10 nm, there was no difference in frequency dispersion with and without sacrificial oxidation. This means that the SiO₂ growth in the initial stage of oxidation was significantly affected by the sacrificial oxidation treatment.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

Pages:

562-565

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.562

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Online since:

February 2014

Authors:

Takuji Hosoi*, Yusuke Uenishi, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe

Keywords:

4H-SiC(0001), Interface Property, Sacrificial Oxidation, Thermal Oxidation

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References

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