Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Tomasz Sledziewski; Aleksey Mikhaylov; Sergey A. Reshanov; Adolf Schöner; Heiko B. Weber; M. Krieger

doi:10.4028/www.scientific.net/MSF.778-780.575

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Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation
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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
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Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Reduction of Density of 4H-SiC / SiO2 Interface...

Reduction of Density of 4H-SiC / SiO₂ Interface Traps by Pre-Oxidation Phosphorus Implantation

Abstract:

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO₂ interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps D_it with energy E_C - E_it > 0.3 V for P⁺-implanted samples with [P]_interface = 1.5 10¹⁸ cm^-3 in the SiC layer at the interface.

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Materials Science Forum (Volumes 778-780)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.575

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Online since:

February 2014

Authors:

Tomasz Sledziewski*, Aleksey Mikhaylov, Sergey A. Reshanov, Adolf Schöner, Heiko B. Weber, M. Krieger

Keywords:

Conductance Method, Interface Trap, MOS Interface, Phosphorus Ion Implantation

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